Inspection device and inspection method of dielectric film, and method of manufacturing semiconductor device
AssigneeFujitsu Limited
InventorsJeffrey S. Cross, Mineharu Tsukada
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AssigneeFujitsu Limited
InventorsJeffrey S. Cross, Mineharu Tsukada
Estimating the term…
After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling N2 gas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H2+97 vol % N2 to the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual H2O and residual O2 in the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual H2O and residual O2 in an exhaust gas are measured by sensors.
An inspection device of a dielectric film, comprising:
An inspection method of a dielectric film, comprising the steps of:
Dependencies are inferred from the claim text.