Deterministically doped field-effect devices and methods of making same

A supermolecular structure comprising a host structure and an engineered array of at least one dopant atom disposed at a channel region of the host structure to impart substantial control of a source-drain carrier flow, the supermolecular structure also being described by the formula:

• HiY1j . . . Ykl
• wherein:
• H defines the channel region material;
• i is a total number of host matrix atoms;
• Y defines the dopant atom type, with 1 to k dopant atom types;
• j is the discrete number of dopant atoms of the 1st dopant atom type in the engineered array;
• and
• l is the discrete number of dopant atoms of the kth dopant atom type in the engineered array.

A field-effect transistor comprising:

• a source region;
• a drain region;
• a gate structure;
• a first insulator disposed beneath the gate structure and above the source region and the drain region;
• and
• a supermolecular structure disposed beneath the first insulator, the supermolecular structure comprising a host structure and an engineered array of at least one dopant atom disposed at a channel region of the host structure to facilitate substantial control of a source-drain carrier flow, the supermolecular structure also being described by the formula:
• HiY1j . . . Ykl
• wherein:
• H defines the channel region material;
• i is a total number of host matrix atoms;
• Y defines the dopant atom type, with 1 to k dopant atom types;
• j is the discrete number of dopant atoms of the 1st dopant atom type in the engineered array;
• and
• l is the discrete number of dopant atoms of the kth dopant atom type in the engineered array.