Collector having unused region for illumination systems using a wavelength less than or equal to 193 nm

An illumination system for wavelengths ≦193 nm, comprising:

• a light source;
• a plane to be illuminated;
• and
• a collector having:
• a first mirror shell adjacent to, and positioned inside of, a second mirror shell around a common axis of rotation, wherein said first and second mirror shells are rotationally symmetric, and wherein at least one of said first and second mirror shells includes a first segment having a first optical surface and a second segment having a second optical surface;
• and
• a component in a region between said first and second mirror shells,
• wherein said collector is for receiving said light from said light source via an object-side aperture and for illuminating an area in said plane, and
• wherein said region is not used by said light.

An EUV projection exposure facility comprising:

• (a) an illumination system for wavelengths ≦193 nm for illuminating a mask, said illumination system including:
• a light source;
• a plane to be illuminated;
• and
• a collector having:
• a first mirror shell adjacent to, and positioned inside of, a second mirror shell around a common axis of rotation, wherein said first and second mirror shells are rotationally symmetric, and wherein at least one of said first and second mirror shells includes a first segment having a first optical surface and a second segment having a second optical surface;
• and
• a component in a region between said first and second mirror shells,
• wherein said collector is for receiving said light from said light source via an object-side aperture and for illuminating an area in said plane, and
• wherein said region is not used by said light;
• and
• (b) a projection objective for imaging said mask on a light-sensitive object.

A method of manufacturing a microelectronic component, comprising using an EUV projection exposure facility having:

• (a) an illumination system for wavelengths ≦193 nm for illuminating a mask, said illumination system including:
• a light source;
• a plane to be illuminated;
• and
• a collector having:
• a first mirror shell adjacent to, and positioned inside of, a second mirror shell around a common axis of rotation, wherein said first and second mirror shells are rotationally symmetric, and wherein at least one of said first and second mirror shells includes a first segment having a first optical surface and a second segment having a second optical surface;
• and
• a component in a region between said first and second mirror shells,
• wherein said collector is for receiving said light from said light source via an object-side aperture and for illuminating an area in said plane, and
• wherein said region is not used by said light;
• and
• (b) a projection objective for imaging said mask on a light-sensitive object.

An illumination system for wavelengths ≦193 nm, comprising:

• a light source;
• a plane to be illuminated;
• a collector having:
• a first mirror shell adjacent to, and positioned inside of, a second mirror shell around a common axis of rotation, wherein said first and second mirror shells are rotationally symmetric;
• and
• a component in a region between said first and second mirror shells,
• wherein said collector is for receiving said light from said light source via an object-side aperture and for illuminating an area in said plane, and
• wherein said region is not used by said light;
• an optical element having a plurality of raster elements in a light path from said light source to said plane;
• a plane conjugated to said light source, between said collector and said plane to be illuminated, in which an intermediate image of said light source is formed;
• and
• a diaphragm positioned in or near said intermediate image, that separates said illumination system into a first space and a second space, wherein said first space includes said light source and said collector.