Photonic crystal light emitting device
AssigneesLumileds Lighting U.S., LLC, Agilent Technologies, Inc.
InventorsJonathan J. Wierer Jr., Michael R. Krames, Mihail M. Sigalas
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Abstract
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
Claims38
A light emitting device comprising:
- a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region;
- and
- a photonic crystal structure formed in an n-type region;
- wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region.
A light emitting device comprising:
- a first layer of first conductivity type;
- a first layer of second conductivity type;
- an active region disposed between a layer of first conductivity type and a layer of second conductivity type;
- a tunnel junction, the tunnel junction comprising:
- a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type;
- and
- a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;
- and
- a third layer of first conductivity type;
- wherein a thickness of the third layer of first conductivity type varies periodically;
- wherein the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type.
A method comprising:
- forming a first layer of first conductivity type;
- forming a first layer of second conductivity type;
- forming an active region between a layer of first conductivity type and a layer of second conductivity type;
- forming a tunnel junction, the tunnel junction comprising:
- a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type;
- and
- a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;
- forming a third layer of first conductivity type;
- and
- forming a plurality of holes formed in the third layer of first conductivity type;
- wherein:
- the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type;
- the plurality of holes formed a lattice;
- and
- a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.
A light emitting device comprising:
- a III-nitride semiconductor structure including an active region disposed between a n-type and a p-type region;
- and
- a photonic crystal structure formed in an n-type region, the photonic crystal comprising a planar lattice of holes, each of the holes having a depth extending from a top opening to a bottom surface, wherein the top opening of the holes are located on a surface of the n-type region in which the photonic crystal structure is formed.
Dependencies are inferred from the claim text.