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US 7,009,904 B2Granted
Back-bias voltage generator with temperature control
AssigneeInfineon Technologies AG
InventorJung Pill Kim
Life of this patent
Estimating the term…
Abstract
Methods and apparatus for varying one or more internally generated voltages of a memory device based on the temperature of the memory device are provided. The device temperature may be measured directly, for example, via an on-chip temperature sensor, or may be supplied as bits in a mode register containing temperature information.
Claims28
A method of generating a voltage internally by a memory device, comprising:
- generating, internally to the memory device, a negative voltage with respect to a ground reference;
- applying the negative voltage to a portion of an array of memory cells;
- obtaining temperature information indicative of the temperature of the memory device;
- and
- varying the level of the negative voltage based on the temperature information.
2 more elements
A method of biasing a switching transistor of one or more memory cells of a memory device, comprising:
- generating, from a supply voltage, a bias voltage to be applied to a substrate of a switching transistor of one or more of the memory cells;
- and
- varying the level of the bias voltage based on temperature information indicative of a temperature of the memory device.
A memory device comprising:
- a plurality of memory cells;
- means for supplying temperature information indicative of a temperature of the memory device;
- and
- a voltage generator to generate a bias voltage negative with respect to a ground reference to be applied to a substrate of a switching transistor of one or more of the memory cells, wherein the voltage generator is configured to vary the level of the bias voltage based on the temperature information.
1 more element
A memory device comprising:
- a plurality of memory cells;
- means for supplying temperature information indicative of a temperature of the memory device;
- and
- a voltage regulator to generate a negative wordline voltage to be applied to a wordline of one or more of the memory cells, wherein the voltage regulator is configured to vary the level of the negative wordline voltage based on the temperature information.
1 more element
Dependencies are inferred from the claim text.