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US 7,009,875 B2Granted
Magnetic memory device structure
OwnerMark B. Johnsoninventor
Life of this patent
Estimating the term…
Abstract
Ferromagnetic elements for use with spin memories, logic devices and processing circuits include a geometry incorporating an asymmetry about one axis and in some instances one or more curved sections. Magnetic memory elements can be set out in an array such that convex and concave portions are also optimally arranged about magnetization axes.
Claims35
A magnetic processing circuit comprising:
- a magnetic element having a variable magnetization state which can be set in response to one or more input signals;
- wherein the magnetic element has a shape that includes a curved portion and is asymmetric along at least a first axis.
A magnetic processing circuit comprising:
- a magnetic element having a variable magnetization state which can be set in response to one or more input signals;
- wherein the magnetic element has a shape that is symmetric along a first axis and asymmetric along a second axis which is perpendicular to said first axis.
A magnetic memory cell comprising:
- a magnetic element which stores data for the memory cell in the form of a variable magnetization state;
- wherein the magnetic element has a shape that is symmetric along a first axis and asymmetric along a second axis which is perpendicular to said first axis.
An electron spin based memory cell comprising:
- a ferromagnetic layer which imparts a variable impedance to a spin polarized current conducted in the electron spin based memory cell;
- wherein the ferromagnetic layer has a shape that is symmetric along a first axis and asymmetric along a second axis which is perpendicular to said first axis;
- wherein said spin polarized current can be read to determine a data value stored in the electron spin based memory cell.
Dependencies are inferred from the claim text.