Magnetic random access memory

A magnetic random access memory in which “0” data and “1” data are associated with resistance values of a non-magnetic layer of a magnetoresistive element that includes a magnetic free layer and a magnetic pinned layer which sandwich the non-magnetic layer, the resistance values being variable depending on orientation of magnetization of the magnetic free layer and the magnetic pinned layer, and current is let to flow to at least one write current path, which is provided close to the magnetoresistive element, thereby producing a write magnetic field, changing a direction of magnetization of the free layer of the magnetoresistive element,

• wherein the write current path includes a channel region of an insulated-gate transistor that is disposed close to the free layer of the magnetoresistive element, and the transistor is controlled such that a channel current, which generates a write magnetic field with a magnitude corresponding to a write threshold or more, flows in the transistor as a write current.