MRAM storage device
AssigneeHewlett-Packard Development Company, L.P.
InventorMauricio Huerta Alva
Life of this patent
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Abstract
A memory device having a main controller including a host interface and a device interface, a first plurality of arrays of magneto-resistive random access memory (MRAM) cells, a first device controller coupled to the device interface and the first plurality of arrays, a second plurality of arrays of MRAM cells, and a second device controller coupled to the device interface and the second plurality of arrays. The first device controller is configured to communicate with the device interface to pass first data between the first plurality of arrays and the host interface, and wherein the second device controller is configured to communicate with the device interface to pass second data between the second plurality of arrays and the host interface.
Claims16
A memory device comprising:
- a main controller including a host interface and a device interface;
- a first plurality of arrays of magneto-resistive random access memory (MRAM) cells;
- a first device controller coupled to the device interface and the first plurality of arrays;
- a second plurality of arrays of MRAM cells;
- and
- a second device controller coupled to the device interface and the second plurality of arrays,
- wherein the first device controller is configured to communicate with the device interface to pass first data between the first plurality of arrays and the host interface, and wherein the second device controller is configured to communicate with the device interface to pass second data between the second plurality of arrays and the host interface.
Dependencies are inferred from the claim text.