Nonvolatile memory device using serial diode cell
AssigneeHynix Semiconductor Inc.
InventorHee Bok Kang
Life of this patent
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Abstract
A nonvolatile memory device features a serial diode cell by effectively arranging a cross point cell array including a nonvolatile ferroelectric capacitor and a serial PN diode chain to reduce the whole memory size. A serial diode cell array including a nonvolatile ferroelectric capacitor and a serial diode switch which does not require an additional gate control signal is positioned on a circuit device region including a word line driving unit, a sense amplifier, a data bus, a main amplifier, a data buffer and an input/output port. An interlayer insulating film separates a cell array region and the circuit device region, thereby reducing the whole chip size.
Claims13
A nonvolatile memory device using a serial diode cell, comprising:
- a plurality of serial diode cell arrays each including a plurality of unit serial diode cells arranged in row and column directions;
- a circuit device region, formed on a silicon substrate positioned under the plurality of serial diode cell arrays, for driving the plurality of serial diode cell arrays;
- and
- an insulating layer for insulating the plurality of serial diode cell arrays from the circuit device region,
- wherein the unit serial diode cell comprises:
- a nonvolatile ferroelectric capacitor whose one terminal is connected to a word line;
- and
- a serial diode switch, connected between the other terminal of the nonvolatile ferroelectric capacitor and a bit line, comprising two or more diode devices connected in series and the serial diode switch selectively switched depending on a voltage applied to the word line and the bit line.
The nonvolatile memory device according to 1, further comprising a pad array which is arranged in an external region apart from the plurality of serial diode cell arrays and the circuit device region and uses the same metal layer as that of the circuit device region.
Dependencies are inferred from the claim text.