Semiconductor integrated circuit device
AssigneeRohm Co., Ltd.
InventorsIsao Yamamoto, Koichi Miyanaga
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Abstract
Using the leakage current of the base resistance of the bipolar transistor, semiconductor integrated circuit device which detects an overheat condition of the elements protected from overheat, is realized. The overheat detection circuit and the elements or the circuits which might be protected from overheat, are formed on the same substrate. The said overheat detection circuit is comprised of a bipolar transistor, its base resistance, and a constant-voltage source. The constant-voltage source provides a certain voltage to isolate the elements. The joint base resistance is located close to elements or circuits which might be protected from overheat and located far from the constant-voltage source.
Claims10
A semiconductor integrated circuit device comprising:
- a substrate
- an overheat detection circuit formed on said substrate, and
- at least one element or circuit that is formed on the same substrate as said overheat detection circuit and comprises an overheat protected element or circuit,
- said overheat detection circuit comprising a bipolar transistor, a base resistance of said bipolar transistor, and a constant-voltage source, said substrate having a well region formed therein and said well region having said base resistance formed therein, said constant-voltage source being directly connected to said well region in order to isolate said base resistance from said at least one circuit or element and thereby provides a stable voltage to said well region.
Dependencies are inferred from the claim text.