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AssigneeInternational Business Machines Corporation
InventorsMark W. Hart, Chung H. Lam, Christie R. K. Marrian, Gary M. McClelland, Simone Raoux, Charles T. Rettner, Hemantha K. Wickramasinghe
Estimating the term…
A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.
A memory cell comprising:
A method of manufacturing a memory cell, said method comprising:
A method of indirectly switching and sensing phase change memory cells, said method comprising:
Dependencies are inferred from the claim text.