Method and device for testing the ESD resistance of a semiconductor component

Method for testing the ESD resistance of a semiconductor component, comprising steps of:

• applying a direct current (Io) to the semiconductor component;
• monitoring a direct current characteristic of the semiconductor component to detect a direct current failure threshold of the semiconductor component when operated using the applied direct current;
• and
• inferring the ESD resistance of the semiconductor component from the direct current failure threshold,
• wherein the direct current failure threshold is defined as the direct current (Io) at which the semiconductor component has a leakage current (IL) in the non-conducting direction that is increased compared with a predetermined threshold value, and
• the direct current failure threshold of the semiconductor component is determined in that the applied direct current (Io) with which the semiconductor component is operated is increased until the leakage current (IL) of the semiconductor component (1) has exceeded the set threshold value in the non-conducting direction.