SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
AssigneeNational Yunlin University of Science and Technology
InventorsJung-Chuan Chou, Yii Fang Wang
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Abstract
A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
Claims13
An apparatus for measuring the temperature of an ISFET with an exposed SnO2 gate as a detection membrane, comprising:
- a semiconductor substrate where the ISFET is formed, comprising a pair of sources and drains separated from each other and the exposed SnO2 gate insulated from the surface of the semiconductor substrate;
- a buffer solution contacting the exposed SnO2 gate;
- a light-isolating container for the buffer solution;
- a heater for the buffer solution;
- a temperature controller for the solution heater;
- a test fixer connected to the source and drain of the ISFET;
- and
- a current/voltage measuring device connected to the test fixer to measure and record the source-drain current and the gate voltage of the ISFET.
An apparatus of measuring the hysteresis width and the drift rate, comprising:
- a SnO2 ISFET formed on a semiconductor substrate, comprising a pair of source/drain regions within the semiconductor and an exposed SnO2 gate isolated from the surface of the semiconductor substrate;
- a buffer solution for contacting the exposed SnO2 gate;
- a light-isolation container for isolating light and carrying buffer solution and the SnO2 ISFET;
- a heater for heating the buffer solution;
- a constant current/voltage circuit coupled to the source and drain of the SnO2 ISFET to fix the drain/source current and the drain/source voltage of the SnO2 ISFET;
- a current/voltage measuring device coupled to the constant current/voltage circuit;
- and
- a voltage-time recorder coupled to the constant current/voltage circuit to record the gate/source output voltage of the SnO2 ISFET.
Dependencies are inferred from the claim text.