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US 7,009,306 B2Granted
Semiconductor device and method of manufacturing the same, circuit board, together with electronic instrument
AssigneeSeiko Epson Corporation
InventorTerunao Hanaoka
Life of this patent
Estimating the term…
Abstract
The semiconductor device includes a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes; a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed; a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section; an interconnect formed over the first resin section and one of the electrodes; and a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections.
Claims20
A semiconductor device comprising:
- a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes;
- a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed;
- a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section;
- an interconnect formed over the first resin section and one of the electrodes;
- and
- a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections,
- the second resin sections being separate from the first resin section.
4 more elements
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes;
- forming a first resin section in a central portion of a surface of the semiconductor substrate on which the electrodes are formed;
- forming a plurality of second resin sections on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section;
- forming an interconnect over the first resin section and one of the electrodes;
- and
- forming a resin layer to cover the interconnect and extend from the first resin section to outer sides of the second resin sections,
- the second resin sections being formed separately from the first resin section.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes;
- a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed;
- a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section;
- an interconnect formed over the first resin section and one of the electrodes;
- and
- a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections,
- the second resin sections being formed only along two opposite edges of the semiconductor substrate.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes;
- a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed;
- a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section;
- an interconnect formed over the first resin section and one of the electrodes;
- and
- a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections,
- the resin layer being formed to expose at least an upper end portion of at least one of the second resin sections.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes;
- a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed;
- a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section;
- an interconnect formed over the first resin section and one of the electrodes;
- and
- a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections,
- at least one of the second resin sections having a divider portion which is disposed on the semiconductor substrate from a region on the outer sides of the electrodes towards a region on inner sides of the electrodes through a region between two of the electrodes adjacent to each other.
4 more elements
Dependencies are inferred from the claim text.