Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYukio Yasuda
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Abstract
In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.
Claims17
A semiconductor device, comprising:
- an input terminal, a reference terminal and an output terminal;
- a switching element formed on a semiconductor substrate, whose one electrode is connected to said output terminal and whose other electrode is connected to said reference terminal;
- a control circuit providing a control signal for a control electrode of said switching element based on an input voltage obtained by said input terminal to control a conduction/non-conduction of said switching element;
- and
- a resistance part formed on said semiconductor substrate and interposed between said input terminal and said reference terminal, an input impedance of said input terminal being defined by said resistance part, wherein
- said resistance part includes
- a first resistance having a first temperature dependence;
- and
- a second resistance connected in parallel with or in series to said first resistance and having a second temperature dependence, said input impedance being defined by a combined resistance by said first and said second resistances and
- said first and said second temperature dependences are in an opposite relation to each other in a change of a resistance value according to a temperature change.
Dependencies are inferred from the claim text.