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US 7,009,251 B2Granted
SOI device with reduced junction capacitance
AssigneeInternational Business Machines Corporation
InventorToshiharu Furukawa
Life of this patent
Estimating the term…
Abstract
An SOI FET comprising a silicon substrate having silicon layer on top of a buried oxide layer having doped regions and an undoped region is disclosed. The doped region has a dielectric constant different from the dielectric constant of the doped regions. A body also in the silicon layer separates the source/drains in the silicon layer. The source/drains are aligned over the doped regions and the body is aligned over the undoped region. A gate dielectric is on top of the body and a gate conductor is on top of the gate dielectric.
Claims16
An SOI FET comprising:
- a silicon substrate having silicon layer on top of a buried oxide layer having doped regions and an undoped region, said undoped region having a dielectric constant different from a dielectric constant of said doped regions;
- source/drains in said silicon layer and separated by a body in said silicon layer, said source/drains aligned over said doped regions and said body aligned over said undoped region, said doped regions not extending under said body and said doped regions not in direct physical contact with said body;
- and
- a gate dielectric on top of said body and a gate on top of said gate dielectric, said doped regions not extending under said gate.
1 more element
An SOI FET comprising:
- a substrate having a silicon layer on top of a buried oxide layer, said buried oxide layer having doped regions and an undoped region, said undoped region having a dielectric constant different from a dielectric constant of said doped regions;
- source/drains in said silicon layer and separated by a body in said silicon layer, said source/drains aligned over said doped regions of said buried oxide layer and said body aligned over said undoped region of said buried oxide layer said doped regions not extending under said body and doped regions not in direct physical contact with said body;
- and
- a gate dielectric on top of said body and a gate on top of said gate dielectric said doped regions not extending under said gate.
1 more element
Dependencies are inferred from the claim text.