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US 7,009,248 B2Granted
Semiconductor device with asymmetric pocket implants
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYin-Pin Wang, Chin-Sheng Chang
Life of this patent
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Abstract
A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.
Claims6
A semiconductor device comprising:
- a source, a gate and a drain;
- a source-drain depletion region in a substrate under the gate;
- a single deep-pocket ion implant and a single shallow-pocket ion implant provided in the source-drain depletion region in a staggered configuration, wherein the semiconductor device contains only one deep-pocket ion implant and only one shallow-pocket ion implant.
A semiconductor device comprising:
- a source, a gate and a drain;
- a source-drain depletion region in a substrate under the gate;
- a single deep-pocket ion implant in the source-drain depletion region at a drain side;
- a single shallow-pocket ion implant in the source-drain depletion region at a source side;
- a secondary deep-pocket ion implant in a source side of the source-drain depletion region, the secondary deep-pocket ion implant having been countered by ions of the source;
- and
- a secondary shallow-pocket ion implant in a drain side of the source-drain depletion region, the secondary shallow-pocket ion implant having been countered by ions of the drain.
4 more elements
A semiconductor device comprising:
- a source, a gate and a drain;
- a source-drain depletion region in a substrate under the gate;
- a single deep-pocket ion implant in the source-drain depletion region at a source side;
- a single shallow-pocket ion implant in the source-drain depletion region at a drain side;
- a secondary deep-pocket ion implant in a drain side of the source-drain depletion region, the secondary deep-pocket ion implant having been countered by ions of the drain;
- and
- a secondary shallow-pocket ion implant in a source side of the source-drain depletion region, the secondary shallow-pocket ion implant having been countered by ions of the source.
4 more elements
Dependencies are inferred from the claim text.