US 7,009,245 B2 · High-K tunneling dielectric for read only memory device and fabrication method thereof

Abstract

A fabrication method for a read only memory device with a high dielectric constant tunneling dielectric layer, wherein this method provides forming a tunneling dielectric layer on a substrate, wherein the tunneling dielectric layer is formed with HfSiON or HfOxNy. An electron trapping layer and a top oxide layer are sequentially formed over the tunneling dielectric layer. Thereafter, the oxide layer, the electron trapping layer and the tunneling dielectric layer are patterned to form a plurality of stacked structures, followed by forming doped regions in the substrate between the stacked structures. Buried drain oxide layers are further formed over the surface of the doped regions, followed by forming a patterned conductive layer as the word line for the read only memory device.

Claims9

Dependent claims

A read only memory device with a high dielectric constant tunneling dielectric layer, comprising:

a substrate;
a tunneling dielectric layer, disposed over the substrate, wherein the tunneling dielectric layer is formed with a material selected from the group consisting of HfSiON and HfOxNy, wherein the tunneling dielectric layer reduces leakage of electrons stored in the charge trapping layer into the substrate;
an electron trapping layer, disposed over the tunneling dielectric layer;
a top dielectric layer, disposed over the electron trapping layer, wherein the tunneling dielectric layer, the electron trapping layer and the top dielectric layer form a stacked structure;
a conductive layer, disposed at least over the top dielectric layer;
and
a buried diffusion region, configured in the substrate beside bath sides of the stacked structure.

4 more elements

Dependencies are inferred from the claim text.

High-K tunneling dielectric for read only memory device and fabrication method thereof

Life of this patent

High-K tunneling dielectric for read only memory device and fabrication method thereof

Life of this patent

Abstract

Claims9