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US 7,009,238 B2Granted
Deep-trench capacitor with hemispherical grain silicon surface and method for making the same
AssigneeProMOS Technologies Inc.
InventorsYueh-Chuan Lee, Shih-Lung Chen
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Abstract
A method for manufacturing a trench capacitor that includes providing a semiconductor substrate, forming a deep trench in the substrate, forming a thin sacrificial layer on a surface of the trench, and forming a hemispherical silicon grain layer over the thin sacrificial layer, wherein the sacrificial layer has a thickness to act as an etch stop during a subsequent step to remove at least a portion of the hemispherical silicon grain layer, and is electrically conductive.
Claims12
A capacitor formed in a substrate of a semiconductor device, comprising:
- a deep trench formed in the substrate having a surface;
- a sacrificial layer formed on the surface of the trench, wherein the sacrificial layer is electrically conductive;
- a hemispherical silicon grain layer formed on the sacrificial layer;
- and
- at least one buried plate formed in the substrate and contiguous with the sacrificial layer and separated from the hemispherical silicon grain layer.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a trench formed in the substrate having a first surface;
- a sacrificial layer formed on the first surface, wherein the sacrificial layer is electrically conductive;
- a hemispherical silicon grain layer formed on the sacrificial layer;
- and
- at least one buried plate formed in the substrate and on a surface opposing the first surface, wherein the at least one buried plate is separated from the hemispherical silicon grain layer.
3 more elements
Dependencies are inferred from the claim text.