Conductive memory stack with non-uniform width

A conductive memory device comprising:

• a bottom electrode having a top face with a first surface area;
• a top electrode located above the bottom electrode having a bottom face with a second surface area;
• and
• a multi-resistive state element, wherein a read operation is non-destructive to a resistive state of the multi-resistive state element the multi-resistive state element is sandwiched between the bottom electrode and the top electrode and having a bottom face with a third surface area and a top face with a fourth surface area, the multi-resistive state element's bottom face being in contact with the bottom electrode's top face, and the multi-resistive state element's top face being in contact with the top electrode's bottom face;
• wherein the fourth surface area is not equal to the second surface area.