Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorJunichi Mitani
Life of this patent
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Abstract
A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film (18) that covers at least side surfaces of a wiring (16) in a first region (2) and a first-stage conductive plug (15b) in a second region (3), then forming insulating films (20, 28) on the etching stop insulating film (18) and the wiring (16), then forming a hole (28) on a first-stage conductive plug (15b) by etching a part of the insulating films (20, 28) until the etching stop insulating film (18) is exposed, then exposing an upper surface of the first-stage conductive plug (15b) by etching selectively the etching stop insulating film (18) through the hole (28), and then forming a second-stage conductive plug (31a) in the hole (28).
Claims10
A semiconductor device comprising:
- a first impurity diffusion layer formed in a semiconductor substrate in a first region;
- a second impurity diffusion layer formed in the semiconductor substrate in a second region;
- a first insulating film formed over the semiconductor substrate;
- a first hole in the first insulating film over the first impurity diffusion layer in the first region;
- a first conductive plug formed in the first hole;
- a wiring formed on the first insulating film in the first region;
- a second insulating film formed over the wiring and the first insulating film in the first region and the second region;
- a second hole formed in the second insulating film away from the wiring in the first region and connected to the first hole;
- an electrode formed on the second insulating film in the first region and connected electrically to the first conductive plug through the second hole;
- a third hole formed in the first insulating film over the second impurity diffusion layer in the second region;
- a fourth hole formed in the second insulating film on the third hole in the second region;
- a second conductive plug formed in the third hole;
- a third conductive plug formed in the fourth hole;
- and
- a third insulating film formed of material different from the second insulating film, formed on side surfaces of the wiring, and formed from on a portion of an upper surface of the second conductive plug to on a portion of the first insulating film around the second conductive plug:
- wherein, the fourth hole is formed to pass through a portion of the third insulating film on the upper surface of the second conductive plug, and is formed on the upper surface of the second conductive plug and on an upper surface of the first insulating film.
A semiconductor device comprising:
- a first impurity diffusion layer and a second impurity diffusion layer formed in a semiconductor substrate in a first region;
- a third impurity diffusion layer formed in the semiconductor substrate in a second region;
- a first insulating film for covering the first impurity diffusion layer, the second impurity diffusion layer, and the third impurity diffusion layer;
- a first hole in the first insulating film in the first region;
- a first conductive plug formed in the first hole;
- a second insulating film formed over the first conductive plug and the first insulating film;
- a second hole formed in the second insulating film in the first region to expose the first conductive plug;
- a third hole formed in the first insulating film and the second insulating film in the second region and having a depth to reach the third impurity diffusion layer;
- a second conductive plug formed in the third hole;
- a wiring formed on the second insulating film and connected electrically to the first conductive plug through the second hole;
- a third insulating film formed on side surfaces of the wiring, and formed from on a portion of upper surface of the second conductive plug to on a portion of the second insulating film around the second conductive plug;
- a fourth insulating film formed over the third insulating film and made of material different from the third insulating film;
- and
- a fourth hole formed in the third insulating film and the fourth insulating film in the second region such that at least a part of the fourth hole overlaps with the second conductive plug;
- a third conductive plug formed in the forth hole;
- wherein, the fourth hole is formed to pass through a portion of the third insulating film on the upper surface of the second conductive plug, and is formed on the upper surface of the second conductive plug and on an upper surface of the first insulating film.
Dependencies are inferred from the claim text.