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US 7,009,226 B1Granted
In-situ nitride/oxynitride processing with reduced deposition surface pattern sensitivity
AssigneeAdvanced Micro Devices, Inc.
InventorSey-Ping Sun
Life of this patent
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Abstract
Carrier mobility in transistor channel regions is increased by depositing a conformal stressed liner. Embodiments include forming a silicon oxynitride layer on the stressed liner to reduce or eliminate deposition surface pattern sensitivity during gap filling, and in-situ SACVD of silicon oxide gap fill directly on the stressed liner with reduced pattern sensitivity. Embodiments also include the use of Si—Ge substrates.
Claims9
A semiconductor device comprising:
- a substrate;
- a plurality of transistors formed on the substrate, each transistor comprising source/drain regions and a gate electrode, having an upper and side surfaces, over the substrate with a gate dielectric layer therebetween, the gate electrodes being separated by a gap;
- a conformal stressed nitride liner over the upper and side surfaces of the gate electrodes and over the source/drain regions;
- and
- a dielectric layer over the transistors and filling the gaps between the gate electrodes.
2 more elements
Dependencies are inferred from the claim text.