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US 7,009,221 B2Granted
Light-emitting thyristor and self-scanning light-emitting device
AssigneeNippon Sheet Glass Co., Ltd.
InventorSeiji Ohno
Life of this patent
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Abstract
A light-emitting thyristor having an improved luminous efficiency is provided. According to the light-emitting thyristor, a p-type AlGaAs layer and an n-type AlGaAs layer are alternately stacked to form a pnpn structure on a GaAs buffer layer formed on a GaAs substrate, and Al composition of the AlGaAs layer just above the GaAs buffer layer is increased in steps or continuously.
Claims8
A light-emitting thyristor, comprising:
- a p-type anode layer including Zn as an impurity;
- an n-type gate layer formed adjacent to the p-type anode layer;
- a p-type layer formed adjacent to the n-type gate layer;
- and
- an n-type cathode layer formed adjacent to the p-type gate layer;
- wherein an impurity concentration of at least the part of the anode layer near the n-type gate layer is lower than an impurity concentration of the n-type gate layer.
3 more elements
Dependencies are inferred from the claim text.