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US 7,009,218 B2Granted
Nitride semiconductor device
AssigneeNichia Corporation
InventorsYasunobu Sugimoto, Akinori Yoneda
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Abstract
A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.
Claims30
A nitride semiconductor device comprising:
- a semiconductor layer;
- a first electrode for establishing an ohmic contact disposed on the semiconductor layer, the first electrode including an upper layer and a lower layer and being subjected to heat treatment;
- and
- a second electrode formed on the first electrode, the second electrode having a different shape from a shape of the first electrode, the second electrode further including an upper layer and a lower layer,
- wherein the upper layer of the first electrode consist of an elemental metal, a compound or alloy including at least one of Pt, Pd, Rh, Ir, Ru and Os and the lower layer of the second electrode consists of an elemental metal, a compound or alloy including at least one of Pt, Pd, Rh, Ir, Ru and Os and form a joint region joining the first electrode to the second electrode and at least one of materials forming the upper layer of the first electrode and at least one of materials forming the lower layer of the second electrode are the same.
2 more elements
A nitride semiconductor device comprising:
- a semiconductor layer;
- a first electrode for establishing an ohmic contact disposed on the semiconductor layer;
- a second electrode on the first electrode, having a different shape from the shape of the first electrode;
- and
- an insulating layer on the surface of the semiconductor layer,
- wherein the surface of the semiconductor layer on which the first electrode is formed comprises an electrode formation region and an insulating layer formation region, and the second electrode is disposed on the electrode formation region and the insulating layer formation region;
- wherein the first electrode includes an upper layer and a lower layer, and the second electrode further includes an upper layer and a lower layer, wherein the upper layer of the first electrode and the lower layer of the second electrode each consist of an elemental metal, a compound or alloy including at least one of Pt, Pd, Rh, Ir, Ru and Os and form a joint region joining the first electrode to the second electrode.
4 more elements
A nitride semiconductor device comprising:
- a semiconductor layer;
- a first electrode for establishing an ohmic contact disposed on the semiconductor layer;
- a second electrode on the first electrode, having a different shape from the shape of the first electrode;
- and
- an insulating layer of the surface of the semiconductor layer, wherein the insulating layer is disposed between a) the first electrode and the second electrode and b) the semiconductor layer;
- and
- wherein the surface of the semiconductor layer on which the first electrode is formed comprises an electrode formation region and an insulating layer formation region, and the second electrode is disposed on the electrode formation region and the insulating layer formation region;
- wherein the first electrode includes an upper layer and a lower layer, and the second electrode further includes an upper layer and a lower layer, wherein the upper layer of the first electrode and the lower layer of the second electrode each comprise an elemental metal, a compound or alloy including at least one of Pt, Pd, Rh, Ir, Ru and Os and form a joint region joining the first electrode to the second electrode.
5 more elements
Dependencies are inferred from the claim text.