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US 7,009,200 B2Granted
Field effect transistor
AssigneeKabushiki Kaisha Toshiba
InventorsTsutomu Tezuka, Shinichi Takagi, Tomohisa Mizuno
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Abstract
A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.
Claims9
A field effect transistor comprising:
- a source and a drain;
- and
- a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0),
- wherein Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer, and
- thicknesses of the source and drain are greater than the thickness of a center portion of the channel layer.
2 more elements
A field effect transistor comprising:
- a source and a drain;
- and
- a channel layer of Si1-x-yGexCy crystalline layer (1>x≧0, 1>y≧0) having a lattice strain,
- wherein the lattice strain increases toward a drain end, in a vicinity of a source end of the channel layer, and
- a step is formed at a source end.
2 more elements
Dependencies are inferred from the claim text.