Method of processing a substrate, heating apparatus, and method of forming a pattern
AssigneeKabushiki Kaisha Toshiba
InventorsKenji Kawano, Shinichi Ito, Eishi Shiobara
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Abstract
A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
Claims17
A heating apparatus comprising:
- a holding section configured to hold a substrate;
- a heating section arranged in a state of facing the surface of the substrate held by the holding section, and selectively heating a partial range of the substrate;
- a moving section configured to relatively move the heating section and the substrate in a direction of relative motion parallel to the main surface of the substrate;
- a stream forming section configured to form gas or liquid stream between the heating section and the substrate, the gas or liquid stream being along the direction of relative motion of the heating section and the substrate;
- a processing condition determining section configured to determine processing conditions of the partial range heated by the heating section;
- and
- a controller configured to uniformly heat the substrate surface based on determination by the processing condition determining section.
Dependencies are inferred from the claim text.