Dielectric thin films from fluorinated precursors
AssigneeDielectric Systems, Inc.
InventorChung J. Lee
Life of this patent
Estimating the term…
Abstract
New precursors and processes are disclosed for making fluorinated, low dielectric constant ∈ thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future <0.13 μm integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.
Claims19
A dielectric thin film prepared by polymerizing an ethylenic-containing precursor with a biphenyl-containing precursor.
A dielectric thin film prepared by polymerizing an ethylenic-containing precursor with a dieneone-containing precursor.
A method of making a dielectric thin film material, comprising:
- (a) dissolving or suspending precursors in a solvent to give a solution or suspension of the precursors in the solvent;
- (b) spinning the solution or the suspension of the precursors in the solvent onto a substrate to form a thin wet film;
- (c) heating the thin wet film to a temperature that is below a boiling-temperature of the solvent to remove most of the solvent from the thin wet film to form a thin dried film;
- and
- (d) heating the thin dried film to a temperature that is below a glass-transition temperature of the thin dried film to give the dielectric thin film material.
Dependencies are inferred from the claim text.