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AssigneeJapan Science and Technology Agency
InventorsMitsunori Sato, Tsutomu Yamashita, Hiroshi Maeda, Sangjae Kim, Masanori Nagao
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The present invention relates to a defect-free oxide high-critical temperature superconductor acicular crystal, that is, an oxide high-critical temperature superconductor acicular crystal that is substantially a perfect crystal and also relates to a method for producing the same, wherein such a crystal is essential for achieving superconducting electronic devices. The oxide high-critical temperature superconductor acicular crystal of the present invention includes an acicular crystal having a Bi2Sr2Ca2Cu3O10 (Bi-2223) crystal structure and is grown from a powder compact by heat-treating the powder compact in an oxygen atmosphere, wherein the powder compact contains an oxide having the Bi-2223 crystal structure and TeO2, CaO, or (SrCa)3TeO6. The achievement of the acicular crystal having the Bi-2223 crystal structure contributes to the development of superconducting electronic devices that have been theoretically proposed but have not been achieved.
A method for producing an oxide high-critical temperature superconductor acicular crystal, comprising a step of heat-treating a powder compact at 840 to 890° C. in an atmosphere containing 5 to 100% of oxygen to grow an acicular crystal having a Bi2Sr2Ca2Cu3O10 crystal structure, wherein the powder compact contains one mol of an oxide having the Bi2Sr2Ca2Cu3O10 crystal structure and 0.2 to 0.8 mol of TeO2.
A method for producing an oxide high-critical temperature superconductor acicular crystal, comprising a step of heat-treating a powder compact at 840 to 890° C. in an atmosphere containing 5 to 100% of oxygen to grow an acicular crystal having a Bi2Sr2Ca2Cu3O10 crystal structure, wherein the powder compact contains one mol of an oxide having the Bi2Sr2Ca2Cu3O10 crystal structure, 0.2 to 0.8 mol of TeO2, and 0.1 to 2.0 mol of CaO.
A method for producing an oxide high-critical temperature superconductor acicular crystal, comprising a step of heat-treating a powder compact at 840 to 890° C. in an atmosphere containing 5 to 100% of oxygen to grow an acicular crystal having a Bi2Sr2Ca2Cu3O10 crystal structure, wherein the powder compact contains one mol of an oxide having the Bi2Sr2Ca2Cu3O10 crystal structure and 0.2 to 0.8 mol of an oxide having a (SrCa)3TeO6 crystal structure.
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