High permittivity dielectric ceramic composition and electronic device
AssigneeTDK Corporation
InventorsNorio Sasaki, Yoshiharu Watanabe
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Abstract
A high permittivity dielectric ceramic composition wherein a main component includes BaTiO3: 74.24 to 79.97 mol %, BaZrO3: 5.69 to 12.04 mol %, CaTiO3: 7.84 to 12.13 mol %, MgTiO3: 3.11 to 4.72 mol % and Bi2TiO5: 0.10 to 0.60 mol %. With respect to 100 wt % of the main component, 0.1 or less (excepting 0) of NiO, 0.1 wt % or less (excepting 0) of CeO2, and 0.2 wt % or less (excepting 0) of MnO are included. In accordance with need, 0.2 wt % or less (excepting 0) of SiO2 is further included with respect to 100 wt % of the main component. A high relative permittivity, such as 9000 or more, a high AC breakdown voltage, and a small electrostatic capacity change rage with respect to temperature can be obtained.
Claims12
A high permittivity dielectric ceramic composition, comprising 0.1 wt % or less (excepting 0) of NiO, 0.1 wt % or less (excepting 0) of CeO2, and 0.2 wt % or less (excepting 0) of MnO with respect to 100 wt % of a main component including
- BaTiO3:
- 74.24 to 79.97 mol %
- BaZrO3:
- 5.69 to 12.04 mol %
- CaTiO3:
- 7.84 to 12.13 mol %
- MgTiO3:
- 3.11 to 4.72 mol % and
- Bi2TiO5:
- 0.10 to 0.60 mol % in total of 100 mol % of the main component.
A high permittivity dielectric ceramic composition, comprising 0.1 wt % or less (excepting 0) of NiO, 0.1 wt % or less (excepting 0) of CeO2, and 0.2 wt % or less (excepting 0) of MnO with respect to 100 wt % of a main component including
- BaTiO3:
- 74.38 to 79.79 mol %
- BaZrO3:
- 7.33 to 10.15 mol %
- CaTiO3:
- 8.34 to 12.13 mol %
- MgTiO3:
- 3.40 to 3.76 mol % and
- Bi2TiO5:
- 0.10 to 0.60 mol % in total of 100 mol % of the main component.
An electronic device comprising a dielectric layer, wherein said dielectric layer comprises 0.1 wt % or less (excepting 0) of NiO, 0.1 wt % or less (excepting 0) of CeO2, and 0.2 wt % or less (excepting 0) of MnO with respect to 100 wt % of a main component including
- BaTiO3:
- 74.24 to 79.97 mol %
- BaZrO3:
- 5.69 to 12.04 mol %
- CaTiO3:
- 7.84 to 12.13 mol %
- MgTiO3:
- 3.11 to 4.72 mol % and
- Bi2TiO5:
- 0.10 to 0.60 mol % in total of 100 mol % of the main component.
An electronic device comprising a dielectric layer, wherein said dielectric layer comprises 0.1 wt % or less (excepting 0) of NiO, 0.1 wt % or less (excepting 0) of CeO2, and 0.2 wt % or less (excepting 0) of MnO with respect to 100 wt % of a main component including
- BaTiO3:
- 74.38 to 79.79 mol %
- BaZrO3:
- 7.33 to 10.15 mol %
- CaTiO3:
- 8.34 to 12.13 mol %
- MgTiO3:
- 3.40 to 3.76 mol % and
- Bi2TiO5:
- 0.10 to 0.60 mol % in total of 100 mol % of the main component.
Dependencies are inferred from the claim text.