US 7,008,882 B2 · Method and structure for the adhesion between dielectric layers

Abstract

A method for forming an adhesion between dielectric layers, it includes forming a first dielectric layer and forming a second dielectric layer having a first portion and a second portion. The first portion is on the first dielectric layer and the second portion is on the first portion. The first portion and second portion are formed by an in-situ method. The first portion has at least one of the following a dielectric constant, hardness or SiCH3/SiO area ratio, which is higher than the second portion. A structure of enhanced-inter-adhesion dielectric layers includes a first dielectric layer and a second dielectric layer having a first portion on the first dielectric layer, and a second portion on the first portion. Herein, the first portion has a dielectric constant around 2.8 to 3.5 higher than second portion.

Claims15

Dependent claims

A method for forming an adhesion between dielectric layers, the method comprising:

providing a first dielectric layer;
and
in-situ forming a first portion of a second dielectric layer on said first dielectric layer, and a second portion of said second dielectric layer on said first portion, wherein said first portion has a dielectric constant in the range of about 2.8 to 3.5 and a thickness that is less than about 10 angstroms, said second portion has a dielectric constant in the range of 1.1 to 3 and a thickness that is thicker than said thickness of said first portion, and said first portion comprises carbon therein.

Dependencies are inferred from the claim text.

Method and structure for the adhesion between dielectric layers

Life of this patent

Method and structure for the adhesion between dielectric layers

Life of this patent

Abstract

Claims15