Selective capping of copper wiring
AssigneeInternational Business Machines Corporation
InventorsPanayotis C. Andricacos, Shyng-Tsong Chen, John M. Cotte, Hariklia Deligianni, Mahadevaiyer Krishnan, Wei-Tsu Tseng, Philippe M. Vereecken
Life of this patent
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Abstract
Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
Claims23
A method for fabricating a patterned copper structure which comprises providing a dielectric material on a substrate, providing at least one trench/via in the dielectric material;
- providing a liner on the bottom and sidewalls of the at least one trench/via and on horizontal surfaces of the dielectric material in the vicinity of the at least one trench/via;
- depositing copper in the at least one trench/via on the liner;
- and selectively etching the copper by electroetching to recess the copper with respect to the top surfaces of the dielectric;
- and then selectively depositing on the Cu, one or more materials by electrolytic plating or by electroless plating, and
- wherein an etchant is applied through a nozzle for the electroetching and the nozzle is circular with a diameter smaller than the diameter of the substrate for reducing the overall current during the electroetching and wherein the electroetching is carried out under substantially constant voltage conditions.
A method for fabricating a patterned copper structure which comprises providing a dielectric material on a substrate, providing at least one trench/via in the dielectric material;
- providing a liner on the bottom and sidewalls of the at least one trench/via and on horizontal surfaces of the dielectric material in the vicinity of the at least one trench/via;
- depositing copper in the at least one trench/via on the liner;
- and selectively etching the copper by electroetching to recess the cooper with respect to the top surfaces of the dielectric;
- and then selectively depositing on the Cu, one or more materials by electrolytic plating or by electroless plating and further comprising removing said liner from horizontal surfaces on said dielectric followed by selectively seeding the copper and then plating a capping layer on the seeding by electroless plating.
A method for fabricating a patterned copper structure which comprises providing a dielective material on a substrate;
- providing a liner on the bottom and sidewalls of the at least one trench/via and on horizontal surfaces of the dielectric material in the vicinity of the at least one trench/via;
- depositing copper in the at least one trench/via on the liner for filling the at least one trench/via;
- and
- selectively electroplating a metal or alloy on the copper;
- and
- wherein the metal or alloy is applied through a nozzle for the selective electroplating and the nozzle is circular with a diameter smaller than the diameter of the substrate for reducing the overall current during the electroplating and wherein the electroplating is carried out under substantially constant current conditions.
Dependencies are inferred from the claim text.