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US 7,008,868 B2Granted
Passivation scheme for bumped wafers
AssigneeFairchild Semiconductor Corporation
InventorRajeev Joshi
Life of this patent
Estimating the term…
Abstract
A bumped wafer for use in making a chip device. The bumped wafer includes two titanium layers sputtered alternatingly with two copper layers over a non-passivated die. The bumped wafer further includes under bump material under solder bumps contained thereon.
Claims6
A method of making a bumped wafer, the method comprising:
- providing a non-passivated die;
- alternatingly sputtering a first titanium layer, a first copper layer, a second titanium layer and a second copper layer onto the die;
- depositing photo resist material onto the second copper layer;
- etching isolation areas thereby removing the photo resist material, the second copper layer, the second titanium layer and the first copper layer at the isolation areas;
- depositing photo resist material to define bump locations;
- etching at bump locations thereby removing portions of the second copper layer and the second titanium layer at the bump locations;
- depositing under-bump material at the bump locations;
- depositing solder on the under-bump material;
- removing the photo resist material;
- etching the second titanium layer at the isolation locations;
- etching the second copper layer;
- and
- reflowing the solder.
10 more elements
A method comprising:
- providing a non-passivated die;
- forming a first titanium layer at non-isolation locations on the die;
- forming a first copper layer directly on the first titanium layer;
- forming a second titanium layer directly on the first copper layer at non-solder bump locations;
- forming a second copper layer on the second titanium layer;
- etching the second copper layer, the second titanium layer, and the first copper layer at a first location;
- and
- etching the second copper layer and the second titanium layer at a second location.
5 more elements
A method comprising:
- providing a non-passivated die;
- forming a first titanium layer on the non-passivated die;
- forming a copper layer directly on the first titanium layer;
- forming a second titanium layer directly on the copper layer, wherein the second titanium layer includes an aperture;
- forming a copper structure within the aperture of the second titanium layer;
- and
- forming a solder structure over the copper structure.
4 more elements
Dependencies are inferred from the claim text.