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AssigneeBoe Hydis Technology Co., Ltd.
InventorsEok Su Kim, Ho Nyeon Lee, Myung Kwan Ryu, Jae Chul Park, Kyoung Seok Son, Jun Ho Lee, Se Yeoul Kwon
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Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.
A method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film, which is formed on a glass substrate by interposing a buffer layer therebetween, by irradiating a laser beam onto the amorphous silicon film using a predetermined mask, the method comprising the steps of:
A mask pattern for forming a polycrystalline silicon layer by irradiating an amorphous silicon layer with a laser according to a sequential lateral solidification technique, the mask pattern comprising:
A method of forming a polycrystalline silicon film by crystallizing an amorphous silicon film by irradiating a laser beam onto the amorphous silicon film using a mask, the method comprising the step of:
Dependencies are inferred from the claim text.