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US 7,008,861 B2Granted
Semiconductor substrate assemblies and methods for preparing and dicing the same
AssigneeCree, Inc.
InventorsPeter Andrews, Elbert Brown, Gerald H. Negley
Life of this patent
Estimating the term…
Abstract
A method for forming semiconductor devices using a semiconductor substrate having first and second opposed surfaces and including first and second device regions includes directing a beam of laser light at the substrate such that the beam of laser light is focused within the substrate between the first and second surfaces thereof and the beam of laser light forms a thermally weakened zone (TWZ) in the substrate. The TWZ extends between the first and second device regions and defines a break line.
Claims60
A method for forming semiconductor devices using a semiconductor substrate having first and second opposed surfaces and including first and second device regions, the method comprising the step of:
- directing a beam of laser light at the substrate such that the beam of laser light is focused within the substrate between the first and second surfaces thereof and the beam of laser light forms a thermally weakened zone (TWZ) in the substrate, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line.
A semiconductor substrate assembly comprising:
- a) a semiconductor substrate having first and second opposed surfaces and including first and second device regions and a connecting portion extending between and joining the first and second device regions;
- b) a thermally weakened zone (TWZ) within the connecting portion and between the first and second surfaces, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line;
- and
- c) a fully ablated ablation trench defined in a surface of the substrate and extending along the break line;
- d) wherein the first and second device regions are separable to form first and second dice by breaking the substrate along the break line;
- and
- e) wherein the TWZ has a depth into the connecting portion of at least 50% of a thickness of the connecting portion.
4 more elements
A semiconductor substrate assembly comprising:
- a) a semiconductor substrate having first and second opposed surfaces and including first and second device regions and a connecting portion extending between and joining the first and second device regions;
- b) a thermally weakened zone (TWZ) within the connecting portion and between the first and second surfaces, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line;
- and
- c) a shaping trench in the second side of the substrate;
- d) wherein the first and second device regions are separable to form first and second dice by breaking the substrate along the break line;
- and
- e) wherein the TWZ has a depth into the connecting portion of at least 50% of a thickness of the connecting portion.
4 more elements
A semiconductor substrate assembly comprising;
- a) a semiconductor substrate having first and second opposed surfaces and including first and second device regions and a connecting portion extending between and joining the first and second device regions;
- b) a thermally weakened zone (TWZ) within the connecting portion and between the first and second surfaces, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line;
- c) at least one device layer on the first surface of the substrate, the at least one device layer including first and second device portions disposed on the first and second device regions, respectively;
- and
- an isolation trench in the at least one device layer, the isolation trench defining a first mesa including the first device portion and a second mesa including the second device portion;
- e) wherein the first and second device regions are separable to form first and second dice by breaking the substrate along the break line;
- and
- f) wherein the TWZ has a depth into the connecting portion of at least 50% of a thickness of the connecting portion.
5 more elements
A semiconductor substrate assembly comprising
- a) a semiconductor substrate having first and second opposed surfaces and including first and second device regions;
- b) a thermally weakened zone (TWZ) within the substrate between the first and second surfaces, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line;
- and
- c) a fully ablated ablation trench defined in a surface of the substrate and extending along the break line;
- d) wherein the ratio of the combined depth of the ablation trench and the TWZ into the substrate to the greater of the maximum width of the TWZ and the maximum width of the ablation trench is at least 1:1;
- and
- e) wherein the first and second device regions are separable to form first and second dice by breaking the substrate along the break line.
4 more elements
A semiconductor substrate assembly comprising:
- a) a semiconductor substrate having first and second opposed surfaces and including first and second device regions;
- b) a thermally weakened zone (TWZ) within the substrate between the first and second surfaces, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line;
- and
- c) a fully ablated ablation trench defined in a surface of the substrate and extending along the break line;
- d) wherein the TWZ has a TWZ depth into the substrate and a TWZ maximum width across the substrate, and the ratio of the TWZ depth to the TWZ maximum width is at least 1:1;
- and
- e) wherein the first and second device regions are separable to form first and second dice by breaking the substrate along the break line.
4 more elements
A semiconductor substrate assembly comprising:
- a) a semiconductor substrate having first and second opposed surfaces and including first and second device regions;
- b) a thermally weakened zone (TWZ) within the substrate between the first and second surfaces, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line;
- c) at least one device layer on the first surface of the substrate, the at least one device layer including first and second device portions disposed on the first and second device regions, respectively;
- and
- d) an isolation trench in the at least one device layer, the isolation trench defining a first mesa including the first device portion and a second mesa including the second device portion;
- e) wherein the TWZ has a TWZ depth into the substrate and a TWZ maximum width across the substrate, and the ratio of the TWZ depth to the TWZ maximum width is at least 1:1;
- and
- f) wherein the first and second device regions are separable to form first and second dice by breaking the substrate along the break line.
5 more elements
A semiconductor substrate assembly comprising:
- a) a semiconductor substrate having first and second opposed surfaces and including first and second device regions;
- b) a thermally weakened zone (TWZ) within the substrate between the first and second surfaces, the TWZ substantially formed by material conversion rather than by material ablation, the TWZ extending between the first and second device regions and defining a break line;
- and
- c) a shaping trench in the second side of the substrate;
- d) wherein the TWZ has a TWZ depth into the substrate and a TWZ maximum width across the substrate, and the ratio of the TWZ depth to the TWZ maximum width is at least 1:1;
- and
- e) wherein the first and second device regions are separable to form first and second dice by breaking the substrate along the break line.
4 more elements
Dependencies are inferred from the claim text.