Method and system for fabricating free-standing nanostructures
AssigneeInfineon Technologies AG
InventorsAudrey Dupont, Ronald Hoyer
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Abstract
Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.
Claims32
A method for fabricating free-standing nanostructures, comprising:
- providing a semiconductor wafer comprising a substrate and a patterned layer above the substrate, the patterned layer comprising a plurality of openings extending from an upper surface of the patterned layer to an upper surface of the substrate, and structural elements being arranged within the openings;
- providing a process chamber, the process chamber being configured to receive the semiconductor wafer;
- introducing the semiconductor wafer into the process chamber;
- injecting an etching chemistry into the process chamber to etch the patterned layer and to release the structural elements as free-standing nanostructures on the semiconductor wafer, the etching chemistry comprising a carbon dioxide fluid and an etching solution;
- rinsing the semiconductor wafer by flooding a carbon dioxide fluid into the process chamber;
- and
- drying the semiconductor wafer by injecting a supercritical carbon dioxide fluid into the process chamber and by venting out the supercritical carbon dioxide fluid from the process chamber.
A system for fabricating free-standing nanostructures, comprising:
- a semiconductor wafer comprising a substrate and a patterned layer disposed above the substrate, the patterned layer comprising a plurality of openings extending from the surface of the patterned layer to the surface of the substrate and structural elements being arranged within the openings;
- a process chamber, the process chamber being configured to receive the semiconductor wafer;
- means for introducing the semiconductor wafer into the process chamber;
- means for injecting an etching chemistry into the process chamber to etch the patterned layer and to release the structural elements as free-standing nanostructures on the semiconductor wafer, the etching chemistry comprising a liquid or supercritical carbon dioxide fluid and an etching solution;
- means for rinsing the semiconductor wafer by flooding a liquid or supercritical carbon dioxide fluid into the process chamber;
- and
- means for drying the semiconductor wafer by venting out supercritical carbon dioxide fluid from the process chamber.
Dependencies are inferred from the claim text.