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US 7,008,852 B2Granted
Discontinuous dielectric interface for bipolar transistors
AssigneeInternational Business Machines Corporation
InventorsArne W. Ballantine, Douglas D. Coolbaugh, Jeffrey Gilbert, Joseph R. Greco, Glenn R. Miller
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Abstract
A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor material, thereby controlling electrical resistance at the interface.
Claims10
A process for forming at least one discontinuous interface region between two regions of semiconductor material, the process comprising:
- forming, at least one region of dielectric material comprising nitrogen in the vicinity of at least a portion of a boundary between the two regions of semiconductor material, wherein said dielectric material is in the form of a plurality of islands, thereby controlling electrical resistance at the interface wherein forming the at least one region of dielectric material comprises depositing a discontinuous film of the dielectric material by a chemical vapor deposition process.
Dependencies are inferred from the claim text.