Method and composite for decreasing charge leakage
AssigneeMicron Technology, Inc.
InventorsMichael Nuttall, Garry A. Mercaldi
Life of this patent
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Abstract
A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.
Claims56
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- depositing a layer of amorphous silicon on the floating gate;
- forming a layer of silicon dioxide by oxidizing the layer of amorphous silicon;
- depositing a layer of silicon nitride on the layer of silicon dioxide;
- depositing a layer of silicon rich nitride on the layer of silicon nitride;
- and
- forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- depositing a layer of amorphous silicon on the floating gate;
- forming a layer of silicon dioxide by partially oxidizing the layer of amorphous silicon;
- depositing a layer of silicon nitride on the layer of silicon dioxide;
- depositing a layer of silicon rich nitride on the layer of silicon nitride;
- and
- forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- depositing a layer of amorphous polysilicon on the floating gate;
- forming a layer of silicon dioxide by oxidizing the layer of amorphous polysilicon;
- depositing a layer of silicon nitride on the layer of silicon dioxide;
- depositing a layer of silicon rich nitride on the layer of silicon nitride;
- and
- forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- depositing a layer of amorphous polysilicon on the floating gate;
- forming a layer of silicon dioxide by partially oxidizing the layer of amorphous polysilicon;
- depositing a layer of silicon nitride on the layer of silicon dioxide;
- depositing a layer of silicon rich nitride on the layer of silicon nitride;
- and
- forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide.
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- forming a layer of silicon dioxide on the floating gate;
- depositing a layer of silicon nitride on the layer of silicon dioxide;
- depositing a layer of silicon rich nitride on the layer of silicon nitride;
- and
- forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the second layer of silicon dioxide being adapted to have the control gate formed thereon;
- wherein after depositing the layer of silicon nitride by flowing dichiorosilane and ammonia, the deposition of the layer of silicon rich nitride is accomplished by reducing the flow of ammonia.
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- forming a layer of silicon dioxide on the floating gate;
- depositing a layer of silicon nitride on the layer of silicon dioxide;
- depositing a layer of silicon rich nitride on the layer of silicon nitride;
- and
- forming a second layer of silicon dioxide by oxidizing the layer of silicon rich nitride, the control gate formed on the second layer of silicon dioxide, wherein after depositing the layer of silicon nitride by flowing tetrachlorosilane and ammonia, the deposition of the silicon rich nitride layer is accomplished by reducing the flow of ammonia.
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- forming an oxide layer on the floating gate;
- depositing two nitride layers on the oxide layer;
- and
- forming a second oxide layer by oxidizing one of the two nitride layers, the control gate being adapted to be formed on the oxide layer;
- wherein after depositing a first of the two nitride layers by flowing dichiorosilane and ammonia, the deposition of the second of the two nitride layers is accomplished by reducing the flow of ammonia.
A process for forming a dielectric composite for insulating a floating gate from a control gate, the process comprising:
- forming an oxide layer on the floating gate;
- depositing two nitride layers on the oxide layer;
- and
- forming a second oxide layer by oxidizing one of the two nitride layers, the control gate formed on the oxide layer, wherein after depositing a first of the two nitride layers by flowing tetrachlorosilane and ammonia, the deposition of a second of the two nitride layers is accomplished by reducing the flow of ammonia.
Dependencies are inferred from the claim text.