Semiconductor device having metal-insulator-metal capacitor and method for fabricating the same

A method for fabricating a semiconductor device, the method comprising:

• forming a first lower interconnect and a second lower interconnect on an insulating layer;
• forming a first inter-metal-dielectric (IMD) layer over the lower interconnects and insulating layer;
• forming a first via in the first IMD layer connected to the first lower interconnect, and a second via and a third via in the first IMD layer connected to the second lower interconnect;
• sequentially forming a first metal layer and a dielectric film on the first IMD layer including the first, the second, and the third vias;
• patterning the dielectric film to remain on at least a portion of the first metal layer above the third via;
• forming a second metal layer on the dielectric film and the first metal layer;
• patterning the second metal layer, the dielectric film, and the first metal layer simultaneously to form a first interlayer interconnect comprising the first and the second metal layers connected to the first via, a second interlayer interconnect comprising the first and the second metal layers connected to the second via, and a metal-insulator-metal (MIM) capacitor connected to the third via, wherein the MIM capacitor comprises a lower electrode formed of the first metal layer, the dielectric film, and an upper electrode formed of the second metal layer;
• forming a second IMD layer over the first and the second interlayer interconnects and the MIM capacitor;
• forming a fourth via connected to the first interlayer interconnect, a fifth via connected to the second interlayer interconnect and a sixth via connected to the upper electrode of the MIM capacitor;
• and
• forming upper interconnects on the second IMD layer to be respectively connected to the fourth, fifth, and sixth vias.