Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode

A method of manufacturing a capacitor, the method comprising:

• forming a lower metal electrode of a capacitor;
• performing a primary wet treatment on a surface of the lower metal electrode;
• performing a secondary wet treatment on the surface of the tower metal electrode using an etchant containing LAL;
• performing a third wet treatment on the surface of the lower metal electrode using an etchant containing ozone water;
• forming a dielectric layer on the surface of the lower metal electrode using a high-k dielectric material;
• and
• forming an upper metal electrode on the dielectric layer.

A method of manufacturing a capacitor, the method comprising:

• forming a lower metal electrode of a capacitor;
• performing a primary wet treatment on a surface of the lower metal electrode using an etchant containing HF;
• performing a secondary wet treatment on the surface of the lower metal electrode using an etchant containing LAL;
• performing a third wet treatment on the surface of the lower metal electrode using an etchant containing H2SO4;
• forming a dielectric layer on the lower metal electrode using a high-k dielectric material;
• and
• forming an upper metal electrode on the dielectric layer.

A method of manufacturing a capacitor, the method comprising:

• forming a lower metal electrode of a capacitor;
• performing a primary wet treatment on a surface of the lower metal electrode to remove unwanted surface oxides from the surface of the lower metal electrode, wherein the primary wet treatment is performed using an etchant containing one selected from the group consisting of HF, LAL, and SC1, or a combination thereof;
• performing a secondary wet treatment on the surface of the lower metal electrode by using a different etchant than the etchant used in the primary wet treatment to remove unwanted surface organic materials from the surface of the lower metal electrode, wherein the secondary wet treatment is performed using an etchant containing ozone water;
• forming a dielectric layer on the lower metal electrode using a high-k dielectric material;
• and
• forming an upper metal electrode on the dielectric layer.

A method of manufacturing a capacitor, the method comprising:

• forming a lower metal electrode of a capacitor;
• performing a primary wet treatment on a surface of the lower metal electrode to remove unwanted surface oxides from the surface of the lower metal electrode, wherein the primary wet treatment is performed using an etchant containing LAL;
• subsequent to performing the primary wet treatment, performing a secondary wet treatment on the surface of the lower metal electrode by using a different etchant than the etchant used in the primary wet treatment to remove a remaining residue of unwanted surface oxides and unwanted surface organic materials from the surface of the lower metal electrode, wherein the secondary wet treatment is performed using an etchant containing H2SO4;
• forming a dielectric layer on the lower metal electrode using a high-k dielectric material;
• and
• forming an upper metal electrode on the dielectric layer.

A method of manufacturing a capacitor, the method comprising:

• forming a lower metal electrode of a capacitor;
• performing a primary wet treatment on an entire upper surface of the lower metal electrode to remove unwanted surface oxides from the surface of the lower metal electrode, wherein the primary wet treatment is performed using an etchant containing SC1;
• subsequent to performing the primary wet treatment, performing a secondary wet treatment on the entire upper surface of the lower metal electrode by using a different etchant than an etchant used in the primary wet treatment to remove a remaining residue of unwanted surface oxides and unwanted surface organic materials from the surface of the lower metal electrode, wherein the secondary wet treatment is performed using an etchant containing H2SO4;
• forming a dielectric layer an the lower metal electrode using a high-k dielectric material;
• and
• forming an upper metal electrode on the dielectric layer.