Back to results
US 7,008,834 B2Granted
Method for manufacturing a semiconductor device
AssigneeFujitsu Limited
InventorsSatoshi Nakai, Jun Sakuma, Mitsugu Tajima
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device includes: forming a first photoresist pattern on a second hard mask by use of ArF; forming first and second openings in the second hard mask by use of the first photoresist pattern as an etching mask; forming third and fourth openings in a first hard mask under the first and second openings; forming a partial trench (first trench) and a trench for a full trench (second trench) in an SOI substrate (semiconductor substrate) under the first and second openings; and forming the trench for a full trench into a full trench by etching the trench for a full trench through the fourth opening exposed through a third window of a second photoresist pattern.
Claims21
A method for manufacturing a semiconductor device comprising:
- forming a first mask layer over a semiconductor layer;
- forming a silicon layer as a second mask layer over the first mask layer;
- forming a first photoresist over the second mask layer, and after exposing the first photoresist with ArF, making the first photoresist into a first photoresist pattern having a first window and a second window by developing the first photoresist;
- forming a first opening in the second mask layer under the first window and forming a second opening in the second mask layer under the second window, by etching the second mask layer through the first window and the second window;
- forming a third opening in the first mask layer under the first opening and forming a fourth opening in the first mask layer under the second opening, by etching the first mask layer through the first opening and the second opening;
- removing the first photoresist pattern;
- forming a first trench and a second trench in the semiconductor layer under the third opening and the fourth opening by etching the semiconductor layer while using the second mask layer as an etching mask;
- covering the first mask layer with a second photoresist pattern that covers the first trench and has a third window through which the fourth opening is exposed;
- and
- etching the second trench to a depth deeper than a depth of the first trench through the fourth opening exposed through the third window.
7 more elements
A method for manufacturing a semiconductor device comprising:
- forming a first mask layer over a semiconductor layer;
- forming a second mask layer over the first mask layer;
- forming a first photoresist over the second mask layer, and forming a first photoresist pattern having a first window and a second window by photolithography in which ArF is used;
- forming a first opening in the second mask layer under the first window and forming a second opening in the second mask layer under the second window, by etching the second mask layer through the first window and the second window;
- forming a third opening in the first mask layer under the first opening and forming a fourth opening in the first mask layer under the second opening, by etching the first mask layer through the first opening and the second opening;
- removing the first photoresist pattern;
- forming a first trench and a second trench in the semiconductor layer under the third opening and the fourth opening by etching the semiconductor layer while using the second mask layer as an etching mask;
- forming a second photoresist, and forming a second photoresist pattern that covers the first trench and has a third window through which the fourth opening is exposed, by photolithography in which KrF is used;
- and
- etching the second trench to a depth deeper than a depth of the first trench through the fourth opening exposed through the third window.
7 more elements
A method for manufacturing a semiconductor device comprising:
- forming a first mask layer over a semiconductor layer;
- forming a second mask layer over the first mask layer;
- forming a first photoresist pattern having a first window and a second window and containing alicyclic-hydrocarbon-containing polymer, over the second mask layer;
- forming a first opening in the second mask layer under the first window and forming a second opening in the second mask layer under the second window, by etching the second mask layer through the first window and the second window;
- forming a third opening in the first mask layer under the first opening and forming a fourth opening in the first mask layer under the second opening, by etching the first mask layer through the first opening and the second opening;
- removing the first photoresist pattern;
- forming a first trench and a second trench in the semiconductor layer under the third opening and the fourth opening by etching the semiconductor layer while using the second mask layer as an etching mask;
- forming a second photoresist pattern covering the first trench, having a third window through which the fourth opening is exposed, and containing an aromatic ring;
- and
- etching the second trench to a depth deeper than a depth of the first trench through the fourth opening exposed through the third window.
7 more elements
A method for manufacturing a semiconductor device comprising:
- forming a multi-level mask layer, including a silicon layer as an upper layer, having first and second windows over a semiconductor layer by photolithography in which ArF is used;
- forming first and second trenches in the semiconductor layer by etching through the first and second window;
- forming a photoresist pattern for covering the first trench and exposing the second trench;
- and
- etching the second trench such that the second trench has a depth deeper than that of the first trench.
2 more elements
Dependencies are inferred from the claim text.