Damascene process for a T-shaped gate electrode
AssigneeAdvanced Micro Devices, Inc.
InventorsRamkumar Subramanian, Christopher F. Lyons, Marina V. Plat, Bhanwar Singh
Life of this patent
Estimating the term…
Abstract
A damascene process can be utilized to form a T-shaped gate. A silicon rich nitride or SiON layer can be etched to form a first aperture. An oxide layer can be provided above the silicon rich nitride layer or SiON layer. A second aperture or trench can be provided in the oxide layer. The second trench can have a larger width than the trench in the silicon rich nitride layer or SiON layer. A gate conductor material, such as polysilicon, can be provided in the first trench and/or the second trench.
Claims19
A method of manufacturing an integrated circuit having a T-shaped gate conductor, the method comprising the following steps performed in the order below:
- providing a gate dielectric layer above a top surface of a substrate;
- providing a silicon and nitrogen containing layer above the gate dielectric layer;
- providing an oxide layer above the silicon and nitrogen containing layer;
- selectively etching the oxide layer to form a first trench in the oxide layer;
- selectively etching the silicon and nitrogen containing layer to form a second trench in the silicon and nitrogen containing layer, the second trench being narrower than the first trench and being disposed below the first trench;
- and
- providing a gate conductor material in the first trench and the second trench to form the T-shaped gate conductor.
A method of manufacturing a T-shaped gate conductor for an integrated circuit, the method comprising:
- providing a first layer above a gate dielectric layer, the gate dielectric layer being above a substrate, the first layer including silicon and nitrogen;
- providing a second layer above the first layer;
- selectively etching a first aperture in the second layer by etching;
- selectively etching a second aperture in the first layer utilizing an etching process, wherein the second aperture is narrower than the first aperture;
- filling the first aperture and the second aperture with a gate conductor material;
- and
- removing the gate conductor material above the second layer, thereby leaving the T-shaped gate conductor in the first and second aperture, wherein the gate dielectric is provided before the first layer is provided.
A method of manufacturing an ultra-large scale integrated circuit including a transistor with a T-shaped gate conductor, the method includes steps of:
- providing a gate dielectric layer above a substrate;
- after providing the gate dielectric layer, providing a first layer above the gate dielectric layer, the first layer including a silicon and nitrogen;
- providing an oxide layer over the first layer;
- selectively etching a first trench in the oxide layer;
- selectively etching a second trench in the first layer, the second trench having a smaller width than the first trench;
- and
- providing a gate conductor material in the first trench and in the second trench to form the T-shaped gate conductor.
Dependencies are inferred from the claim text.