Method of forming a wafer backside interconnecting wire
AssigneeTouch Micro-System Technology Inc.
InventorsShih-Feng Shao, Chen-Hsiung Yang, Hsin-Ya Peng
Life of this patent
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Abstract
A method of forming a wafer backside interconnecting wire includes forming a mask layer on the back surface, the mask layer including at least an opening corresponding to the bonding pad, performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, removing the mask layer, and forming an interconnecting wire on the back surface.
Claims20
A method of forming a wafer backside interconnecting wire, the wafer comprising a front surface, a back surface, at least a circuit element positioned on the front surface, and at least a bonding pad positioned on the front surface and electrically connected to the circuit element, the method comprising:
- forming a mask layer on the back surface, the mask layer comprising at least an opening corresponding to the bonding pad;
- performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, the first etching process being isotropic, wherein after the first etching process is performed, the recess has a round shape and the bonding pad is kept unexposed;
- removing the mask layer;
- performing a second etching process from the back surface to etch the wafer until exposing the bonding pad after removing the mask layer;
- and
- forming an interconnecting wire on the back surface.
A method of forming a wafer backside interconnecting wire, the wafer comprising a front surface, a back surface, at least a circuit element positioned on the front surface, and at least a bonding pad positioned on the front surface and electrically connected to the circuit element, the method comprising:
- forming a mask layer on the back surface, the mask layer comprising at least an opening corresponding to the bonding pad;
- performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, the first etching process being anisotropic, wherein subsequent to performing the first etching process, the sidewall of the recess is inclined outward, and the bonding pad is exposed;
- removing the mask layer;
- and
- forming an interconnecting wire on the back surface.
Dependencies are inferred from the claim text.