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US 7,008,801 B2Granted
Method of forming ferroelectric thin films on a high-k layer
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Sheng Teng Hsu
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Abstract
A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; depositing a top layer of ferroelectric material on the seed layer at a relatively low temperature; and annealing the substrate, the high-k layer and the ferroelectric layers to form a ferroelectric thin film.
Claims9
A method of fabricating a MFOS capacitor having a ferroelectric thin film deposited on a high-k layer, comprising:
- preparing a silicon substrate;
- forming a high-k layer on the substrate;
- depositing a seed layer of ferroelectric material, having a known phase and orientation, at a relatively high temperature on the high-k layer;
- depositing a top layer of ferroelectric material, having the same phase and orientation as the seed layer, on the seed layer at a relatively low temperature;
- annealing the substrate, the high-k layer and the ferroelectric layers to form a ferroelectric thin film;
- forming an electrode on the ferroelectric thin film;
- and
- metallizing and completing the MFOS capacitor.
5 more elements
Dependencies are inferred from the claim text.