Patterned structures of high refractive index materials
AssigneeLucent Technologies Inc.
InventorsElsa Reichmanis, Shu Yang
Life of this patent
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Abstract
A process for forming a polymer template includes exposing a photoresist having polymer molecules to a light pattern and baking the photoresist to chemically react polymer molecules in portions of the photoresist that were exposed to light of the light pattern. The reacted polymer molecules have a different solubility in a solvent than chemically unreacted polymer molecules. The process also includes washing the baked photoresist with the solvent to produce a porous structure by selectively solvating one of the reacted polymer molecules and the unreacted polymer molecules. The porous structure can be used as template for forming porous structures of high refractive index materials.
Claims12
A process, comprising:
- exposing a polymer photoresist to a light pattern to generate acid in illuminated regions of the photoresist;
- baking the photoresist to cause polymer molecules located in the illuminated regions to react with the acid and become less soluble in a nonpolar solvent without being crosslinked;
- reacting the baked photoresist with a reagent that causes the previously reacted polymer molecules to become more soluble in the nonpolar solvent;
- and
- re-exposing the photoresist to light and rebaking the photoresist to cause unreacted polymer molecules of the photoresist to become less soluble in the nonpolar solvent;
- and
- washing the baked photoresist in a nonpolar solvent to produce voids in the baked photoresist by selectively solvating the reacted polymer molecules.
A process, comprising:
- exposing a photoresist comprising polymer molecules to a light pattern;
- baking the photoresist to make ones of the polymer molecules that were exposed to light of the pattern less soluble in a solvent;
- reacting the baked photoresist with a reagent to make the ones of the polymer molecules more soluble in the solvent;
- and
- re-exposing the photoresist to light and rebaking the photoresist to make others of the polymer molecules that were not exposed to light of the pattern less soluble in the solvent;
- and
- washing the baked photoresist with the solvent to produce voids in the baked photoresist by selectively solvating the ones of the polymer molecules that were exposed to light of the pattern.
Dependencies are inferred from the claim text.