High resolution resists for next generation lithographies
AssigneeThe University of North Carolina at Charlotte
InventorKenneth E. Gonsalves
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AssigneeThe University of North Carolina at Charlotte
InventorKenneth E. Gonsalves
Estimating the term…
The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.
A nanocomposite resist comprising:
A lithographic process comprising:
A polymeric chemically amplified resist comprising:
A polymeric chemically amplified resist comprising methyl methacrylate, t-butyl methacrylate, methacrylic acid, and 3-(3,5,7,9,11,13,15-heptacyclopentylpentacyclo-[9.5.1.13,9.15,15.17,13]octasiloxane- 1-yl)propyl methacrylate.
A polymeric chemically amplified resist comprising:
A polymeric chemically amplified resist comprising methyl methacrylate, t-butyl methacrylate, methacrylic acid, 3-(3,5,7,9,11,13,15-heptacyclopentylpentacyclo-[9.5.1.13,9.15,15.17,13]octasiloxane-1-yl)propyl methacrylate, and [p-CH2═C(CH3)C(O)OC6H4SMe2]OSO2CF3.
A polymeric lithographic resist comprising a photoacid generating component, wherein the photoacid generating component comprises [p-CH2═C(CH3)C(O)OC6H4SMe2]OSO2CF3.
A polymeric resist comprising:
A polymeric chemically amplified resist comprising:
Dependencies are inferred from the claim text.