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US 7,003,013 B2Granted
Distributed feedback semiconductor laser device
AssigneeFurukawa Electric Co., Ltd.
InventorsTomofumi Kise, Masaki Funabashi
Life of this patent
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Abstract
A DFB semiconductor laser device including an n-type semiconductor substrate and a layer structure, overlying the semiconductor substrate, including an active layer, a compound semiconductor layer constituting a diffraction grating and overlying the active layer, and an embedding layer embedding the diffraction grating, wherein said at least one of the compound semiconductor layer and the embedding layer has a carrier density of 7×1017 to 2×1018 cm−3.
Claims8
A distributed feedback (DFB) semiconductor laser device comprising:
- an n-type semiconductor substrate;
- and
- a layer structure, overlying the semiconductor substrate, including an active layer,
- a p-type spacer layer overlying the active layer,
- a p-type compound semiconductor layer constituting a diffraction grating and overlying the spacer layer,
- a p-type embedding layer embedding the diffraction grating, and
- a p-type cladding layer overlying the compound semiconductor layer and the embedding layer,
- wherein said at least one of the compound semiconductor layer and the embedding layer have a carrier density which is greater than a carrier density of the spacer layer and the cladding layer, and which is in the range of 7×1017 to 2×1018 cm−3.
5 more elements
Dependencies are inferred from the claim text.