Semiconductor laser light emitting device

A semiconductor laser light emitting device comprising:

• a stack of group III nitride semiconductor films;
• wherein each group III nitride semiconductor film comprises an element selected from the group consisting of aluminum, gallium, indium, and boron;
• wherein, an upper portion of said stack of group III nitride semiconductor films is formed into a ridge-like stripe, to form a current injection region;
• wherein a current injection width Wst of said current injection region is at a value in a range of 1 μm≦Wst≦3 μm;
• and
• wherein said current injection region is formed on an active layer;
• a current non-injection region formed on both sides of said ridge-like stripe current injection region, wherein said current non-injection region comprises a material expressed by a chemical formula AlxGa1−xN, wherein the component ratio “x” of Al is at a value in a range of 0.3≦x≦1.0;
• a film located between the active layer and the current non-injection region, comprising a material expressed by a chemical formula AlxGa1−xN (0.3≦x≦1.0), and having a combined thickness of less than or equal to 0.2 μm but greater than zero, and
• wherein said stack comprises a diffusion preventive layer, an optical guide layer, a carrier overflow suppressing layer, and a cladding layer formed between the active layer and the current non-injection region.