Nonvolatile semiconductor memory device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasashi Agata, Masanori Shirahama, Toshiaki Kawasaki, Ryuji Nishihara
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Abstract
A nonvolatile semiconductor memory device includes: a first bit cell including a first MOS transistor whose source and drain are connected to form a first control gate and a second MOS transistor which has a floating gate in common with the first MOS transistor; a second bit cell including a third MOS transistor whose source and drain are connected to form a second control gate and a fourth MOS transistor which has a floating gate in common with the third MOS transistor; and a differential amplifier which receives input signals from drains of the respective second and fourth MOS transistors.
Claims11
A nonvolatile semiconductor memory device comprising:
- a first bit cell including a first MOS transistor which is formed on a semiconductor substrate and whose source and drain are connected to form a first control gate and a second MOS transistor which has a floating gate in common with the first MOS transistor;
- a second bit cell including a third MOS transistor which is formed on the semiconductor substrate and whose source and drain are connected to form a second control gate and a fourth MOS transistor which has a floating gate in common with the third MOS transistor;
- and
- a differential amplifier which is formed on the semiconductor substrate and receives input signals from drains of the respective second and fourth MOS transistors.
Dependencies are inferred from the claim text.