Memory device for controlling programming setup time
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorCheng-Hsiung Kuo
Life of this patent
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Abstract
An improved memory device and the method for programming the same are disclosed. The memory device includes at least one memory block requiring a word line pre-charge time to be long enough to program one or more selected memory cells. A monitoring circuit is added for detecting one or more word lines to reach a predetermined threshold voltage to enable a predetermined high voltage to be supplied to one or more latches of the memory cells.
Claims20
A memory device comprising:
- at least one memory block requiring a word line pre-charge time to last long enough to program one or more memory cells associated with one or more selected word lines contained therein;
- and
- a monitoring circuit for detecting that each word line has reached a predetermined threshold voltage to enable a predetermined voltage to be supplied to one or more latches associated with the selected word lines.
A memory device comprising:
- at least one memory block requiring a word line pre-charge time to last long enough to program one or more selected memory cells associated with word lines contained therein;
- a first monitoring circuit for detecting a first test word line contained therein to reach a predetermined threshold voltage to enable a predetermined voltage to be supplied to a first set of selected memory cells;
- and
- a second monitoring circuit for detecting a second test word line contained therein to reach the predetermined threshold voltage to enable the predetermined voltage to be supplied to a second set of selected memory cells.
A method for controlling a memory device, the memory device having at least one memory block having a plurality of memory cells associated with a plurality of word lines, the method comprising:
- providing a first signal initiating a programming cycle;
- generating a second signal from a monitoring circuit indicating that a programming sequence can be initiated for one or more selected word lines;
- and
- providing a predetermined high voltage to one or more source lines associated with the selected word lines after recognizing the second signal,
- wherein the monitoring circuit contains structurally similar memory cells as those in the selected word lines and has the longest pre-charge time among all.
Dependencies are inferred from the claim text.