Method for programming and erasing non-volatile memory with nitride tunneling layer

A method of programming a non-volatile memory cell with a nitride tunneling layer, comprising:

• providing a non-volatile memory cell comprising:
• a substrate
• a nitride tunneling layer disposed on the substrate;
• a charge-trapping layer disposed on the nitride tunneling layer;
• a dielectric layer disposed on the charge trapping layer;
• a gate conductive layer disposed on the dielectric layer;
• and
• a source region and a drain region disposed in the substrate adjacent to the nitride tunneling layer;
• applying a first voltage to the gate conductive layer and grounding the substrate to turn on a channel between the source region and the drain region;
• and
• applying a second voltage to the drain region and ground the source region to induce a current in the channel and thereby to generate hot electrons in the channel,
• wherein the hot electrons are injected into the charge-trapping layer through the nitride tunneling layer to program the nonvolatile memory cell.